Direct determination of intrinsic In x Ga1-x P (x = 0.49) band-gap deformation potentials by cathodoluminescence piezo-spectroscopy-Reference-Cited by-同舟云学术

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Direct determination of intrinsic In x Ga1-x P (x = 0.49) band-gap deformation potentials by cathodoluminescence piezo-spectroscopy

Published:2008-10-10 Issue:1 Volume:246 Page:110-113
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Porporati Alessandro Alan,Furukawa Naohide,Zhu Wenliang,Pezzotti Giuseppe

Funder

Italian National Research Council, CNR

Italian National Institute for Materials Science & Technology, INSTM

Piezotech, Japan, Ltd.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.200844205/fullpdf

Reference11 articles.

1. Valence band engineering in strained-layer structures

2. P. Y. Yu M. Cardona Fundamentals in semiconductors: Physics and materials properties (Springer-Verlag, Berlin, 1996), p. 111.

3. Band-edge deformation potentials in a tight-binding framework

4. Material parameters of In1−xGaxAsyP1−yand related binaries

5. Deformation potentials of Si-doped GaAs from microscopic residual stress fields

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanometer-scale cathodoluminescence analysis of GaAs and its application to the assessment of laser diode;physica status solidi (a);2011-03-22

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