Band-gap shifts in heavily dopedn-type GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.8582/fulltext
Reference22 articles.
1. Heavily doped semiconductors and devices
2. Energy-gap narrowing and state filling in semiconductors under intense laser irradiation
3. Band-gap narrowing in heavily doped many-valley semiconductors
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