Schottky barrier at the AlN/metal junction
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4772716
Reference50 articles.
1. Negative electron affinity and electron emission at cesiated GaN and AlN surfaces
2. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
3. The toughest transistor yet [GaN transistors]
4. Insulated Gate Nitride-Based Field Effect Transistors
5. BARRIER HEIGHT ENHANCED GaN SCHOTTKY DIODES USING A THIN AlN SURFACE LAYER
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2. Microstructure and electronic property of pristine and thermal barrier layers TiN/AlN/ZrB2 buffered 4H-SiC/W interface from first principles study;Applied Surface Science;2021-01
3. Impact of the interface vacancy on Schottky barrier height for Au/AlN polar interfaces;Applied Surface Science;2020-03
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