BARRIER HEIGHT ENHANCED GaN SCHOTTKY DIODES USING A THIN AlN SURFACE LAYER
Author:
Affiliation:
1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0217979208048711
Reference11 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Growth of GaN on Si substrates – roles of BP thin layer
3. Growth and optical properties of GaN on Si(111) substrates
4. Selective growth of high quality GaN on Si(111) substrates
5. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
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1. Schottky barrier at the AlN/metal junction;Journal of Applied Physics;2013-01-07
2. The Fabrication of Ag Islands on AlN/GaN/AlN/Si(111) by Using Thermal Evaporator and Thermal Annealing Methods;Advanced Materials Research;2011-10
3. InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers;IEEE Journal of Quantum Electronics;2011-08
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