Growth and optical properties of GaN on Si(111) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Emerging gallium nitride based devices
2. The Blue Laser Diode;Nakamura,1997
3. High electron mobility AlGaN/GaN heterostructure on (111) Si
4. GaN epilayers grown on 100 mm diameter Si(111) substrates
5. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
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