Enhancing sputtered GaN/Si film quality by adding AlGaN buffer layer in a continuous deposition process-Reference-Cited by-同舟云学术

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Enhancing sputtered GaN/Si film quality by adding AlGaN buffer layer in a continuous deposition process

Published:2024-05 Issue: Volume:48 Page:104250
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Horta Isabela Machado^ORCID,Pereira André Luis de Jesus,Neto Jonas Jakutis^ORCID,Sobrinho Argemiro Soares da Silva,Leite Douglas Marcel Gonçalves^ORCID

Funder

CNPq

FAPESP

CAPES

Publisher

Elsevier BV

Reference22 articles.

1. Progress in Group III nitride semiconductor electronic devices;Hao;J. Semicond.,2012

2. GaN-based power devices: physics, reliability, and perspectives;Meneghini;J. Appl. Phys.,2021

3. Molecular Beam Epitaxy of Nitrides for Advanced Electronic Materials;Koblmüller,2015

4. Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors;Yang;Prog. Quantum Electron.,2022

5. Growth and optical properties of GaN on Si(111) substrates;Lee;J. Cryst. Growth.,2002

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