Influence of metallic surface states on electron affinity of epitaxial AlN films-Reference-Cited by-同舟云学术

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Influence of metallic surface states on electron affinity of epitaxial AlN films

Published:2017-06 Issue: Volume:407 Page:255-259
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mishra Monu,Krishna Shibin,Aggarwal Neha,Gupta Govind

Funder

Council of Scientific and Industrial Research, India

DST (GoI)

SIMCO Global Tech. & System Ltd.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. Field-emission characteristics and large current density of heavily Si-doped AlN and AlxGa1−xN (0.38⩽x<1)

2. AlN/diamond heterojunction diodes

3. Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

4. Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)‐SiC(0001)

5. Electron affinity at aluminum nitride surfaces

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4. High-quality AlN growth: a detailed study on ammonia flow;Journal of Materials Science: Materials in Electronics;2023-01-25

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