Insulated Gate Nitride-Based Field Effect Transistors-Reference-Cited by-同舟云学术

Insulated Gate Nitride-Based Field Effect Transistors

Published:2010 Issue: Volume: Page:379-422
ISSN:
Container-title:Fundamentals of III-V Semiconductor MOSFETs
language:
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Author:

Shur M.,Simin G.,Rumyantsev S.,Jain R.,Gaska R.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4419-1547-4_13.pdf

Reference167 articles.

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4. Gaska R, Yang J W, Osinsky A, Chen Q, Khan M A, Orlov A O, Snider G L, Shur M S, Appl. Phys. Lett., 72(6), 707 (1998)

5. Frayssinet E, Knap W, Lorenzini P, Grandjean N, Massies J, Skierbiszewski C, Suski T, Grzegory I, Porowski S, Simin G, Hu X, Khan M A, Shur M S, Gaska R, Maude D, Appl. Phys. Lett., 77(16), 2551 (2000)

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