Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1342041
Reference8 articles.
1. Deep levels induced by high‐energy boron ion implantation intop‐silicon
2. Detection of the Defects Induced by Boron High-Energy Ion Implantation of Silicon
3. Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation
4. Near-surface defects formed by MeV ion implantation into silicon
5. Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique
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