Detection of the Defects Induced by Boron High-Energy Ion Implantation of Silicon-Reference-Cited by-同舟云学术

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Detection of the Defects Induced by Boron High-Energy Ion Implantation of Silicon

Published:2000 Issue:8 Volume:147 Page:3111
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Hsu Wei-Cheng,Chen Mao-Chieh,Liang Mong-Song

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. STRUCTURAL CHARACTERIZATION OF BRASS BY Au-ION IMPLANTATION: SURFACE ANALYSIS;Surface Review and Letters;2022-01-12

2. Generation and elimination of silicon pitting for 300 mm CMOS process technologies;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11

3. Removing the transients electron trapping in P-N junction diode by using soft X-ray annealing method;International Journal of Materials and Product Technology;2014

4. Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si;Japanese Journal of Applied Physics;2004-08-10

5. Diode Analysis of Advanced Processing Modules for Deep-Submicrometer CMOS Technology Nodes;Journal of The Electrochemical Society;2003

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