Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
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Published:2004-08-10
Issue:8A
Volume:43
Page:5231-5234
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Hsu Wei-Cheng,Liang Mong-Song,Chen Shih-Chang,Chen Mao-Chieh
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering