Near-surface defects formed by MeV ion implantation into silicon-Reference-Cited by-同舟云学术

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Near-surface defects formed by MeV ion implantation into silicon

Published:1993-06 Issue: Volume:80-81 Page:587-590
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Sayama H.,Kinomura A.,Yuba Y.,Takai M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. Alpha-particle-induced soft errors in dynamic memories

2. Improvement of CMOS latch-up immunity using a high energy implanted buried layer

3. A retrograde p-well for higher density CMOS

4. Ext. Abstr. 19th Conf. on Solid State Devices and Materials;Matsuda,1987

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature-dependent growth and transient state of hydrogen-induced nanocavities in silicon;Journal of Applied Physics;2008-08

2. Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure;Japanese Journal of Applied Physics;2002-05-15

3. Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well;Applied Physics Letters;2001-02-12

4. Diode Analysis of High-Energy Boron Implantation-Induced P-Well Defects;Journal of The Electrochemical Society;2001

5. Detection of the Defects Induced by Boron High-Energy Ion Implantation of Silicon;Journal of The Electrochemical Society;2000

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