Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique-Reference-Cited by-同舟云学术

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Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

Published:1994-09-01 Issue:9 Volume:9 Page:1637-1648
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Duenas S,Castan E,Enriquez L,Barbolla J,Montserrat J,Lora-Tamayo E

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=9/a=011/pdf

Reference34 articles.

1. Formation of amorphous layers by ion implantation

2. Deep levels in scanned electron‐beam annealed silicon

3. Defects in preamorphized single‐crystal silicon

4. The role of transient damage annealing in shallow junction formation

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental verification of intermediate band formation on titanium-implanted silicon;Journal of Applied Physics;2013-01-14

2. Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation;AIP Conference Proceedings;2012

3. Comparison of oxide leakage currents induced by ion implantation and high field electric stress;Solid-State Electronics;2001-08

4. Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well;Applied Physics Letters;2001-02-12

5. Diode Analysis of High-Energy Boron Implantation-Induced P-Well Defects;Journal of The Electrochemical Society;2001

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