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Comparison of oxide leakage currents induced by ion implantation and high field electric stress

  • Published:2001-08 Issue:8 Volume:45 Page:1355-1360
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Goguenheim D,Bravaix A,Monserie C,Moragues J.M,Lambert P,Boivin P

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Behavior of the Si/SiO2 interface observed by Fowler–Nordheim tunneling;Maserjian;J Appl Phys,1982

2. Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films;Olivo;IEEE Trans Electron Dev,1993

3. A hot hole-induced low-level leakage current in thin silicon dioxide films;Matsukawa;IEEE Trans Electron Dev,1996

4. Hot hole stress induced leakage current (SILC) transient in tunnel oxides;Wang;IEEE Electron Dev Lett,1998

5. Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections;Goguenheim;J Non-Crystall Solids,1999

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1. Charging control on high energy implanters: A process requirement demonstrated by plasma damage monitoring;Microelectronics Reliability;2009-02

2. Implanted and irradiated SiO[sub 2]∕Si structure electrical properties at the nanoscale;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

3. Defects in Thin and Ultrathin Silicon Dioxides;Defects in Microelectronic Materials and Devices;2008-11-19

4. Radiation induced leakage current in floating gate memory cells;IEEE Transactions on Nuclear Science;2005-12

5. Inter-trap tunnelling in thin SiO2 films;phys. stat. sol. (a);2004-10
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