Charging control on high energy implanters: A process requirement demonstrated by plasma damage monitoring-Reference-Cited by-同舟云学术

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Charging control on high energy implanters: A process requirement demonstrated by plasma damage monitoring

Published:2009-02 Issue:2 Volume:49 Page:209-214
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Cantin C.,Laviron C.,Gove G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Charge neutralization in ion implanters

2. Comparison of oxide leakage currents induced by ion implantation and high field electric stress

3. Gate dielectric integrity: material, process and tool qualification;Wilson,1999

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of substrate resistance and layout on passivation etch-induced wafer arcing and reliability;Microelectronics Reliability;2015-05

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