Funder
Huahong Grace Semiconductor Manufacturing Corporation
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Charging control on high energy implanters: a process requirement demonstrated by plasma damage monitoring;Cantin;Microelectron Reliab,2009
2. Lin CS, Huang JJ, Lo CS, Chuang LS. Control of arcing problem in the passivation HDP deposition process solution. In: Semiconductor Manufacturing Technology Workshop, Dec. 10–11; 2002. p. 161–4.
3. Fu MS, Liu MC, Hsieh MS, Huang CC, Kuo SW. Study of wafer arcing on oxide etching process for advance VLSI technology. In: Semiconductor manufacturing technology workshop, December 10–11; 2002. p. 157–60.
4. Mohammad KA, Siaw YC, Lee DG, Lee S. Mitigating arcing defect at pad etch. In: International conference on electronic devices, systems and applications (ICEDSA), Kuala Lumpur, Malaysia, April 11–14; 2010. p. 344–7.
5. Reduction of plasma-induced damage during HDP–CVD oxide deposition in the inter layer dielectric (ILD) process;Lee;Microelectron Eng,2011
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献