Defects in preamorphized single‐crystal silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103895
Reference8 articles.
1. Electrically active defects in shallow pre-amorphisedp + n junctions in silicon
2. Retarded and enhanced dopant diffusion in silicon related to implantation‐induced excess vacancies and interstitials
3. The production of excess interstitials by pre-amorphisation
4. Defects and leakage currents in BF2‐implanted preamorphized silicon
5. Nitrogen Related Donors in Silicon
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