Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN-Reference-Cited by-同舟云学术

Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN

Published:1999-01-15 Issue:2 Volume:85 Page:1178-1185
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim Esther,Berishev I.,Bensaoula A.,Rusakova I.,Waters K.,Schultz J. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.369243

Reference20 articles.

1. In situ observations of Ge(001) and Ge/Si(001) using low‐energy ion scattering

2. The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED

3. The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED

4. Dopants on Si(100) surfaces: useful probes of silicon atomic layer epitaxy?

5. Microstructure and photoluminescence of GaN grown on Si(111) by plasma‐assisted molecular beam epitaxy

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1. Molecular beam epitaxy of low-bandgap InGaN;Molecular Beam Epitaxy;2013

2. Photoluminescence in GaN and InGaN and their applications in photonics;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

3. Chapter 3 Growth and optical properties of GaN;Processing and Properties of Compound Semiconductors;2001

4. Mass Spectroscopy of Recoiled Ions;Encyclopedia of Materials: Science and Technology;2001

5. Morphology of GaN Surfaces and GaN/(Al,Ga)N Interfaces Grown on 6H-SiC(0001) by Reactive Molecular Beam Epitaxy;physica status solidi (a);2000-07