The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Electronic and optical properties ofδ-layerGaN/(GaAs)nsuperlattices;Physical Review B;2003-06-09
2. GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE;Journal of Crystal Growth;2002-09
3. Droplet Epitaxy of InAs Nanocrystals on GaN/GaAs;Japanese Journal of Applied Physics;2001-11-15
4. III–V surface plasma nitridation: A challenge for III–V nitride epigrowth;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07
5. Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN;Journal of Applied Physics;1999-01-15
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