The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism;Journal of Applied Physics;2003-11
2. Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
3. Plasma cleaning and nitridation of sapphire (α-Al2O3) surfaces: New evidence from in situ real time ellipsometry;Journal of Applied Physics;2000-08-15
4. Measurement of hydrogen content in ultrathin diamond-like carbon films using low-energy elastic recoil detection analysis;Diamond and Related Materials;2000-04
5. Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE;MRS Internet Journal of Nitride Semiconductor Research;2000
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