X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1618357
Reference43 articles.
1. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
2. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
3. Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics
4. Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy
5. The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy
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