Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1845586
Reference31 articles.
1. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
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