Non-parabolic effective mass model for dissipative quantum transport simulations of III–V nano-devices

Author:

Deuschle Leonard1ORCID,Rhyner Reto2,Frey Martin2,Luisier Mathieu1ORCID

Affiliation:

1. Integrated Systems Laboratory, ETH Zurich, Gloriastrasse 35, 8092 Zurich, Switzerland

2. Synopsys Switzerland LLC, Thurgauerstrasse 40, 8050 Zurich, Switzerland

Abstract

Thanks to their formidable electron transport properties, III–V compound semiconductors have established themselves as a possible alternative to strained-Si as future n-type logic switches. To predict the performance of such transistors, device simulators that can capture the peculiarities of the III–V band structure at low computational cost are required. In particular, their strong band non-parabolicity (NP) calls for advanced models going beyond the standard effective mass approximation (EMA). Previous studies have suggested ways to include NP effects into quantum transport calculations in the ballistic limit. Here, such a model is extended to account for electron–phonon interactions. It combines the non-equilibrium Green’s function formalism and the EMA with NP corrections. The proposed method is validated through simulations of InGaAs nanowire field-effect transistors. The results are compared to full-band tight-binding calculations and to the solution of the subband Boltzmann transport equation, showing excellent agreement.

Funder

Centro Svizzero di Calcolo Scientifico

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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5. M. A. Khayer and R. K. Lake, “Modeling and performance analysis of III-V nanowire field-effect transistors,” in Nanowires, edited by N. Lupu (IntechOpen, Rijeka, 2010), Chap. 18.

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