A simplified approach to include confinement induced band structure changes into the NsFET compact model-Reference-Cited by-同舟云学术

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A simplified approach to include confinement induced band structure changes into the NsFET compact model

Published:2022-12-11 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Singh Aishwarya¹,Ganeriwala Mohit D.²,Kaur Ramandeep¹,Mohapatra Nihar R.¹

Affiliation:

1. IIT Gandhinagar,Electrical Engineering,Gandhinagar,India

2. Universidad de Granada,Electronics and Computer Technology,Granada,Spain

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117590/10117577/10118109.pdf?arnumber=10118109

Reference10 articles.

1. Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers

2. Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

3. A Bottom-Up Scalable Compact Model for Quantum Confined Nanosheet FETs

4. BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Algorithm for Calibrating Effective Mass Parameters to consider Quantum Confinement Effects in Ultra-Thin-Body Devices for Various Temperatures;Journal of Electronic Materials;2023-10-04

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