Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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5. Mobility spectrum analysis of carrier transport at insulator/semiconductor interfaces;Umana-Membreno;Microelectron Eng,2013
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A tutorial on the NEGF method for electron transport in devices and defective materials;The European Physical Journal B;2023-08
2. Inspection of the Defect State Using the Mobility Spectrum Analysis Method;Nanomaterials;2022-08-12
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