Trench-type narrow InGaAs quantum wires fabricated on a (311)A InP substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1337635
Reference11 articles.
1. Single quantum wire semiconductor lasers
2. 218 W quasi-CW operation of 1.83 [micro sign]m two-dimensional laser diode array
3. Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition
4. Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates
5. Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
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