InAs quantum dots array grown with an As2 source on non-planar GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Surface migration induced self‐aligned InAs islands grown by molecular beam epitaxy
2. Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substrates
3. Self-assembled InAs quantum dots on InP nano-templates
4. 1.3 μm InAs quantum dots grown with an As[sub 2] source using molecular-beam epitaxy
5. Effects of As2 flux for fabrication of GaAs/AlGaAs quantum wires on V-grooved substrates in molecular beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InP and InGaAs grown on InP substrate by molecular beam epitaxy;MATEC Web of Conferences;2022
2. Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth;Nanotechnology;2012-05-10
3. Ordering, positioning and uniformity of quantum dot arrays;Nano Today;2012-04
4. Electrical control of a laterally ordered InAs/InP quantum dash array;Nanotechnology;2009-10-26
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