Effects of As2 flux for fabrication of GaAs/AlGaAs quantum wires on V-grooved substrates in molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evaluation of multi-stacked InAs/GaNAs self-assembled quantum dots on GaAs (001) grown using different As species;Journal of Crystal Growth;2011-05
2. Preparation and photoluminescence study of patterned substrate quantum wires;Acta Physica Sinica;2011
3. Growth of multi-stacked InAs/GaNAs quantum dots grown with As2 source in atomic hydrogen-assisted molecular beam epitaxy;Physica E: Low-dimensional Systems and Nanostructures;2010-09
4. Growth of GaNAs films with As2 source in atomic hydrogen-assisted molecular beam epitaxy;Journal of Crystal Growth;2008-08
5. InAs quantum dots array grown with an As2 source on non-planar GaAs substrates;Journal of Crystal Growth;2007-04
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