Realization of 1.3μm InAs quantum dots with high-density, uniformity, and quality
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Gain and the threshold of three-dimensional quantum-box lasers
3. Quantum functional devices for advanced electronics
4. Electrical detection of optically induced charge storage in self-assembled InAs quantum dots
5. Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers
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1. Interdot spacing dependence of electronic structure and properties of multistacked InGaAs quantum dots fabricated without strain compensation technique;Japanese Journal of Applied Physics;2018-05-24
2. Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio;Applied Surface Science;2017-01
3. Nanophotonic Devices Based on Semiconductor Quantum Nanostructures;IEICE Transactions on Electronics;2016
4. 1.3-µm Quantum Dot Distributed Feedback Laser with Half-Etched Mesa Vertical Grating Fabricated by Cl2Dry Etching;Japanese Journal of Applied Physics;2013-06-01
5. Thermal Conductive Properties of a Semiconductor Laser on a Polymer Interposer;Japanese Journal of Applied Physics;2013-04-01
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