1.3μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (221)A InP substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

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1.3μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (221)A InP substrates by molecular beam epitaxy

Published:2006-05 Issue:1-2 Volume:32 Page:346-349
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Shimomura S.,Toritsuka T.,Uenishi A.,Kitada T.,Hiyamizu S.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

2. Laser operation at room temperature of self-organized In[sub 0.1]Ga[sub 0.9]As/(GaAs)[sub 6](AlAs)[sub 1] quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

3. Polarization control of vertical cavity surface emitting laser structure by using self-organized quantum wires grown on (775)B-oriented GaAs substrate by molecular beam epitaxy

4. Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

5. High characteristic temperature (T[sub 0]=243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03

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