Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
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1. Hexagonal ZnO/SnO2 core–shell micropyramids: epitaxial growth-based synthesis, chemical conversion, and cathodoluminescence;Inorganic Chemistry Frontiers;2014
2. 1.3μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (221)A InP substrates by molecular beam epitaxy;Physica E: Low-dimensional Systems and Nanostructures;2006-05
3. STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (757)B substrates;Journal of Crystal Growth;2005-05
4. High characteristic temperature (T[sub 0]=243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
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