STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (757)B substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
2. Large conductance anisotropy in a novel two‐dimensional electron system grown on vicinal (111)B GaAs with multiatomic steps
3. Formation of multi-atomic steps and novel heterojunctions on vicinal (1 1 1)B substrates by MBE and anisotropic transport of 2D electrons
4. Formation of uniform GaAs multi-atomic steps with 20–30 nm periodicity and related structures on vicinal (111)B planes by MBE
5. Laser operation at room temperature of self-organized In[sub 0.1]Ga[sub 0.9]As/(GaAs)[sub 6](AlAs)[sub 1] quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
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1. Tunable Out-of-Plane Piezoelectricity in Thin-Layered MoTe2 by Surface Corrugation-Mediated Flexoelectricity;ACS Applied Materials & Interfaces;2018-07-19
2. Optical anisotropy of InGaAs quantum dot arrays aligned along multiatomic steps on vicinal GaAs(111)B;Journal of Applied Physics;2017-11-28
3. Optical anisotropy of InGaAs quantum wire arrays on vicinal (111)B GaAs;Journal of Applied Physics;2016-10-06
4. Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy;Micron;2012-10
5. Modelling of AlAs/GaAs interfacial structures using high-angle annular dark field (HAADF) image simulations;Ultramicroscopy;2012-07
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