Laser operation at room temperature of self-organized In[sub 0.1]Ga[sub 0.9]As/(GaAs)[sub 6](AlAs)[sub 1] quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Laser operation at room temperature of self-organized In[sub 0.1]Ga[sub 0.9]As/(GaAs)[sub 6](AlAs)[sub 1] quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Published:2000 Issue:3 Volume:18 Page:1672
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ohno Yasuhide,Higashiwaki Masataka,Shimomura Satoshi,Hiyamizu Satoshi,Ikawa Seiji

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Structures of Advanced Materials;Optical Properties of Advanced Materials;2013

2. Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

3. Epitaxial Semiconductor Quantum Wires;Journal of Nanoscience and Nanotechnology;2008-07-01

4. 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2007-02-09

5. CORRUGATED SURFACES FORMED ON GaAs (331)A SUBSTRATES: THE TEMPLATE FOR LATERALLY ORDERED InGaAs NANOWIRES;International Journal of Nanoscience;2006-12

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