CORRUGATED SURFACES FORMED ON GaAs (331)A SUBSTRATES: THE TEMPLATE FOR LATERALLY ORDERED InGaAs NANOWIRES-Reference-Cited by-同舟云学术

CORRUGATED SURFACES FORMED ON GaAs (331)A SUBSTRATES: THE TEMPLATE FOR LATERALLY ORDERED InGaAs NANOWIRES

Published:2006-12 Issue:06 Volume:05 Page:757-762
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

MIAO ZHENHUA¹,GONG ZHENG¹,FANG ZHIDAN¹,NIU ZHICHUAN¹

Affiliation:

1. National Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, P. R. China

Abstract

Morphology evolution of high-index (331) A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331) A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X0600511X

Reference16 articles.

1. Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substrates

2. Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs

3. Highly anisotropic morphologies of GaAs(331) surfaces

4. Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen