In‐depth profiling of sputter‐induced space‐charge compensation inp‐silicon Schottky barriers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334398
Reference19 articles.
1. The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
2. Effect of ion‐beam sputter damage on Schottky barrier formation in silicon
3. 2.2 Substrate surface damages by rf-sputtering
4. Electrical Defects in Silicon Introduced by Sputtering and Sputter‐Etching
5. Barrier Formation by Glow-Discharge Induced Centers on Silicon Surfaces
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