Mapping of damage induced by neutral beam etching on GaN surfaces using scanning internal photoemission microscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab106d/pdf
Reference40 articles.
1. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
2. On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors
3. Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature
4. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
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1. Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes;Japanese Journal of Applied Physics;2022-02-23
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4. Mapping of Metal/Semiconductor and Semiconductor/Semiconductor Interfaces Using Scanning Internal Photoemission Microscopy;2019 IEEE CPMT Symposium Japan (ICSJ);2019-11
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