Perspective of Semiconductor Technologies Contributed to the IoT Society

Author:

SHIOJIMA Kenji1

Affiliation:

1. Graduate School of Electrical and Electronics Engineering, Faculty of Engineering, University of Fukui

Publisher

Society of Materials Science, Japan

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. 1) T. Okumura and K. Shiojima, "Scanning Internal-Photoemission Microscopy: New Mapping Technique to Characterize Electrical Inhomogeneity of Metal-Semiconductor Interface," Japanese Journal of Applied Physics, vol. 28, pp. L1108-L1111, (1989).

2. 2) K. Shiojima and T. Okumura, "Improvement in Spatial Resolution of Infrared Scanning Internal-Photoemission Microscope," Japanese Journal of Applied Physics, vol. 30, pp. 2127-2128, (1991).

3. 3) K. Shiojima and T. Okumura, "Mapping Evaluation of Damage Effect on Electrical Properties of GaAs Schottky contacts," Journal of Crystal Growth, vol. 103, pp. 234-242, (1990).

4. 4) K. Shiojima and T. Okumura, "Mapping Evaluation of Inhomogeneity Degraded Au/Pt/Ti Contacts to GaAs" Proceedings of IEEE, 29th International Reliability Physics Symposium, in Las Vegas, p. 234, April (1991).

5. 5) K. Shiojima, S. Yamamoto, Y. Kihara, and T. Mishima, “Nondestructive imaging of buried interfaces in SiC and GaN Schottky contacts using scanning internal photoemission microscopy,” Applied Physics Express, vol. 8, pp. 046502-1- 046502-4, (2015).

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