Barrier Formation by Glow-Discharge Induced Centers on Silicon Surfaces
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/18/i=6/a=017/pdf
Reference8 articles.
1. 2.2 Substrate surface damages by rf-sputtering
2. The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes
3. Electrical characteristics of sputtering-induced defects in n-type silicon
4. Field and thermionic-field emission in Schottky barriers
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2. Formation and characterization of metal-semiconductor junctions;Vacuum;1986-10
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4. In‐depth profiling of sputter‐induced space‐charge compensation inp‐silicon Schottky barriers;Journal of Applied Physics;1985-03-15
5. Electrical Defects in Silicon Introduced by Sputtering and Sputter‐Etching;Journal of The Electrochemical Society;1980-07-01
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