A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method-Reference-Cited by-同舟云学术

A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method

Published:2010-12-15 Issue:12 Volume:108 Page:124508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lu I-Lin,Wu Yuh-Renn,Singh Jasprit

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3524544

Reference30 articles.

1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

2. Ultra-High Efficiency White Light Emitting Diodes

3. Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

4. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

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