Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2721133
Reference8 articles.
1. Chapter 5 AlGalnP Light-Emitting Diodes
2. Comparison of blue and green InGaN∕GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
3. Phase separation in InGaN grown by metalorganic chemical vapor deposition
4. Variational calculations on a quantum well in an electric field
5. Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells
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