Fabrication and Characterization of Multiquantum Shell Light‐Emitting Diodes with Tunnel Junction-Reference-Cited by-同舟云学术

Fabrication and Characterization of Multiquantum Shell Light‐Emitting Diodes with Tunnel Junction

Published:2020-01-03 Issue:7 Volume:217 Page:1900774
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Murakami Hideki¹^ORCID,Suzuki Atsushi¹,Nokimura Kyohei¹,Takebayashi Minoru¹,Goto Nanami¹,Terazawa Mizuki¹,Lu Weifang¹,Sone Naoki¹²,Iida Kazuyoshi¹³,Ohya Masaki¹³,Kamiyama Satoshi¹,Takeuchi Tetsuya¹,Iwaya Motoaki¹,Akasaki Isamu¹⁴

Affiliation:

1. Department of Materials Science and EngineeringFaculty of Science and TechnologyMeijo University Nagoya Aichi 468-8502 Japan

2. Research & Development DepartmentKoito Manufacturing Co., Ltd. Shizuoka 424-8764 Japan

3. Optoelectronics DepartmentTOYODA GOSEI Co., Ltd. Inazawa Aichi 492-8542 Japan

4. Akasaki Research CenterNagoya University Nagoya Aichi 464-8603 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900774

Reference37 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

3. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

4. Threading dislocation evolution in patterned GaN nanocolumn growth and coalescence overgrowth

5. Threading defect elimination in GaN nanowires

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