Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs-Reference-Cited by-同舟云学术

Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs

Published:2022-10-27 Issue:44 Volume:14 Page:50343-50353
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Inaba Soma¹,Lu Weifang¹^ORCID,Ito Kazuma¹,Katsuro Sae¹,Nakayama Nanami¹,Shima Ayaka¹,Jinno Yukimi¹,Yamamura Shiori¹,Sone Naoki¹,Huang Kai²³,Iwaya Motoaki¹,Takeuchi Tetsuya¹,Kamiyama Satoshi¹

Affiliation:

1. Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan

2. Future Display Institute in Xiamen, Xiamen 361005, China

3. Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China

Funder

Ministry of Education, Culture, Sports, Science and Technology

Ministry of Science and Technology of the People's Republic of China

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c13648

Reference56 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

3. Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology

4. Micro-LEDs, a Manufacturability Perspective

5. Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

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