Formation of highlyn‐doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon‐capped gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104361
Reference6 articles.
1. As4/Ga flux ratio dependence on Si incorporation in molecular beam epitaxial GaAs
2. Mechanism of compensation in heavily silicon‐doped gallium arsenide grown by molecular beam epitaxy
3. N+doping of gallium arsenide by rapid thermal oxidation of a silicon cap
4. The interdiffusion of Si, P, and In at polysilicon/GaAs interfaces
5. Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Gallium‐implantation‐enhanced intermixing of close‐surface GaAs/AlAs/AlGaAs double‐barrier quantum wells;Journal of Applied Physics;1995-08-15
2. Oxidation enhanced diffusion of Si in GaAs: The effect of excess As on diffusion depth and carrier concentration;Applied Physics Letters;1995-07-17
3. The Study of Silicon Diffusion into GaAs by Rapid Thermal Oxidation;MRS Proceedings;1993
4. Oxidation induced AlAs/GaAs superlattice disordering;Applied Physics Letters;1992-03-09
5. Oxidation and Diffusion at Poly-SiGe/GaAs Interfaces;MRS Proceedings;1991
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