Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model-Reference-Cited by-同舟云学术

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Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model

Published:1984-04-15 Issue:8 Volume:44 Page:750-752
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Greiner Mark E.,Gibbons James F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.94904

Reference2 articles.

1. Thermal pulse annealing of boron‐implanted HgCdTe

2. Study of Encapsulants for Annealing Si‐Implanted GaAs

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