Changes in the optical reflectivity of implanted silicon as a function of implantation energy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94925
Reference9 articles.
1. ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGION
2. CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 ‐ keV ANTIMONY ION BOMBARDMENT OF SILICON
3. Optical Reflection Studies of Damage in Ion Implanted Silicon
4. ESR AND OPTICAL ABSORPTION STUDIES OF ION‐IMPLANTED SILICON
5. A transient optical reflectivity study of laser annealing of ion‐implanted silicon: Thresholds and kinetics
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1. Damage evolution in low-energy ion implanted silicon;Physical Review B;2007-02-05
2. Annealing of europium-implanted silicon by nanosecond ion-beam pulses;Philosophical Magazine Letters;2001-01
3. In situ computerized optical reflectivity measurement system for ion implantation;IEEE Transactions on Nuclear Science;1993-02
4. In-situ measurement of crystalline-amorphous transition in Si substrates during ion implantation;IEEE Transactions on Nuclear Science;1992-06
5. Mechanisms of phase transitions in ion‐doped silicon layers;Applied Physics Letters;1991-09-23
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