Mechanisms of phase transitions in ion‐doped silicon layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106286
Reference7 articles.
1. Properties investigation of thin silicon nitride layers synthesized by ion implantation
2. Crystalline to amorphous transformation in ion‐implanted silicon: a composite model
3. Changes in the optical reflectivity of implanted silicon as a function of implantation energy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Annealing of radiation defects in dual-implanted silicon;Semiconductor Science and Technology;1996-05-01
2. High‐dose phenomena in zinc‐implanted silicon crystals;Journal of Applied Physics;1996-04
3. Boron electrical activation in dual B+ + N+ + and B+ + Ar+ ion-implanted silicon;Applied Physics A Materials Science & Processing;1996-04
4. Comparison of results and models of solid-phase epitaxial growth of implanted Si layers induced by electron- and ion-beam irradiation;Physical Review B;1993-06-01
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