Comparison of results and models of solid-phase epitaxial growth of implanted Si layers induced by electron- and ion-beam irradiation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.14023/fulltext
Reference44 articles.
1. The dynamic observation of the formation of defects in silicon under electron and proton irradiation
2. Radiation enhanced annealing of radiation damage in Ge
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4. In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As+Ion Implantation
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