CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 ‐ keV ANTIMONY ION BOMBARDMENT OF SILICON
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652789
Reference5 articles.
1. ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGION
2. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
3. TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS
4. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
5. The influence of temperature and channeling on ion-bombardment damage in Si
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1. Morphological changes of Si(100) induced by focused ion beam irradiation;Applied Surface Science;1998-09
2. Chapter 2 Transmission and Reflection Spectroscopy on Ion Implanted Semiconductors;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
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4. Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques;Japanese Journal of Applied Physics;1992-10-01
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