The influence of temperature and channeling on ion-bombardment damage in Si

Author:

Nelson R. S.,Mazey D. J.

Abstract

The ion bombardment of silicon results in the formation of an amorphous phase in the vicinity of the bombarded regions. This gives rise to a milky appearance which is easily distinguishable from an adjacent unbombarded region. Experiments are described which were designed specifically to study the influence of bombardment temperature and channeling on the formation of this phase.

Publisher

Canadian Science Publishing

Subject

General Physics and Astronomy

Cited by 50 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ion Beam Synthesis in Silicon;Novel Silicon Based Technologies;1991

2. Topography of Solid Surfaces Modified by Fast Ion Bombardment;Advances in Electronics and Electron Physics;1990

3. Classical-trajectory calculations onAr+sputtering of a Si(001) surface using anabinitiopotential;Physical Review B;1989-04-15

4. TEM studies of medium-doses Kr+-implanted silicon;Crystal Research and Technology;1988-08

5. Anomalous electron-spin relaxation in amorphous silicon;Physical Review B;1986-04-01

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