Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119453
Reference14 articles.
1. 1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition
2. MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers
3. Metalorganic molecular beam epitaxy of strained multi-quantum-wells for 1.3 μm wavelength laser diodes
4. Defects in epitaxial multilayers
5. Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
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